RF Plasma Support Sputtering Machine
Characteristic
Co-sputtering film formation
We can do co-sputtering of binary and ternary targets.
Optimal materials search
Since our cathodes are small at φ2 inches, we can perform materials searches at low initial cost.
High-temperature film formation
We provide high-temperature film formation at 600℃ and trial manufacturing of piezoelectric films and various kinds of oriented films.
Specifications
Oxide and nitride film formations are possible using a metal target. Supported gases: Ar, O2, N2
* Mixed gases are also supported.
| size of cathode | φ2in×3（RF） |
|---|---|
| size of substrate（MAX） | 〜φ4in.×1 |
| Sub. Temperature（MAX） | 600℃ |
| Exhaust system | RP,TP |
| Power of Depo（MAX） | RF200W X3 |
| Back Pressure（MAX） | 5.0×10-5Pa |
| Reverse-Sputter | × |
| Base metal material | Hf, Al, Co, Cr, Cu, Fe, Ge, Mo, Nb, Ni, Si, Sn, Ta, Ti, V, W, Y, Zn, Zr |
| Precious metal material | Au, Pt, Ir, Pd, Rh, Ru, Ag |
| Oxide material | Al2O3, Gd2O3, HfO2, Nb2O5, SiO2, Ta2O5, TiO2, ZnO, ZrO2 |
| Composite oxide material | IZO, ITO |
| Others | APC, APC-AR, APC-TR, APC-SR, APC-GR, AlN, GaN, Si3N4, Al-0.5wt.%Cu, Al-1.0wt.%Si, Al-2at.%Cr, Al-1.0wt.%Si-0.5wt.%Cu |
*Available materials are listed in the table mentioned above.
CONTACT
Frequently asked questions.
- What is the maximum wafer size for film deposition?
- What is the annealing temperature?
- I'd like to reuse an used beet dish...
- I would like to know the price of Ru nitrate and the recent metal price.
+81-3-5977-3388
Opening from 9:00 to 17:00 on weekdays