Long TS Multiple Cathode Sputtering Machine
Characteristic
LTS type
Film deposition can be performed on a wafer with a resist material without causing the material to harden.
Film deposition is also possible on a film membrane. Moreover, because the film deposition rate is slow, control of ultrathin film (several nanometers) is also possible.
Reactive sputtering
Oxide and nitride film formations are possible using a metal target.
Supported gases: Ar, O2, N2 * Mixed gases are also supported.
Specifications
Since we can form films on everything from minute substrates to φ8 inch wafers, we can release new materials to device development lines and evaluate these materials in-house.
| size of cathode | φ3in.×3(RF×2，DC×1) |
|---|---|
| size of substrate（MAX） | 〜φ8in.×1 |
| Sub. Temperature（MAX） | 500℃ |
| Exhaust system | RP, TP, CP |
| Power of Depo（MAX） | RF300W X2, DC 250W |
| Back Pressure（MAX） | 7.0×10－5Pa |
| Reverse-Sputter | ○ |
| Base metal material | Al, C, Cr, Fe, Mo, Nb, Ni, Re, Si, Sn, Ta, Ti, W, Zn |
| Precious metal material | Au, Pt, Ir, Pd, Ru, Ag |
| Oxide material | Al2O3, MgO, SiO2 |
| Composite oxide material | ITO |
| Others | TaC |
*Available materials are listed in the table mentioned above.
CONTACT
Frequently asked questions.
- What is the maximum wafer size for film deposition?
- What is the annealing temperature?
- I'd like to reuse an used beet dish...
- I would like to know the price of Ru nitrate and the recent metal price.
+81-3-5977-3388
Opening from 9:00 to 17:00 on weekdays