High Vacuum φ8inch Sputtering Machine
Characteristic
Uniform film
We can form films under high vacuum conditions because we use load lock-type apparatus.
We can supply uniform films through the use of φ300mm targets.
Specifications
We are able to support substrate heating temperatures up to 600℃.
This process is ideal for forming precious metal electrode films in high dielectric and ferroelectric devices as well as various memory wiring materials.
| size of cathode | φ300×2（RF+DC） |
|---|---|
| size of substrate（MAX） | 〜φ8in.×4 (load-lock type) |
| Sub. Temperature（MAX） | 600℃ |
| Exhaust system | RP, TP |
| Power of Depo（MAX） | DC2000W X 2 , RF2000W |
| Back Pressure（MAX） | 8.0×10－6Pa |
| Reverse-Sputter | × |
| Supttering Targets | Pt, Ru, Al, Cr, Ta, Ti |
*Available materials are listed in the table mentioned above.
CONTACT
Frequently asked questions.
- What is the maximum wafer size for film deposition?
- What is the annealing temperature?
- I'd like to reuse an used beet dish...
- I would like to know the price of Ru nitrate and the recent metal price.
+81-3-5977-3388
Opening from 9:00 to 17:00 on weekdays